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CLY38 HiRel C-Band GaAs Power-MESFET * * * * * * *
HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 100 MHz to 4.2 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/008, Type Variant No.s 01 to 03
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration 1 2 S 3 D
Package
CLY38-00 (ql) CLY38-05 (ql) CLY38-10 (ql)
-
see below
G
MWP-35
CLY38-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702L111 on request on request Q62702L110
(see order instructions for ordering example)
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Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1
Symbol VDS VDG VGS ID IG PC
Values 14 16 -6 5.6 32 1.5 at VDS 9 V 2.5 at VDS 8 V 3.5 at VDS 7 V
Unit V V V A mA dB
Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation
4)
PC PC TJ Tstg Ptot Tsol
3.5 at VDS 7 V tbd. 175 - 65...+ 175 30 230
dB dB C C W C
Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.:
Rth JS
4.5
K/W
1) Operation Range 1: 930 mA ID 1860 mA 2) Operation Range 2: ID > 1860 mA 3) Operation Range 3: ID < 930 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
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Electrical Characteristics (at TA=25C; unless otherwise specified)
Parameter
Symbol min.
Values typ. max.
Unit
DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 160 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V Drain current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Gate current at pinch-off, high VDS VDS = 12 V, VGS = -4 V Transconductance VDS = 3 V, ID = 720 mA Thermal resistance junction to soldering point VDS = 9 V, ID = 720 mA, Ts = +25C Rth JS 3.8 K/W gm 900 1100 mS -IGp12 3200 A IDp12 8000 A -IGp3 160 A IDp3 400 A -VGth 1.6 2.6 3.6 V IDss 2.4 3.8 5.2 A
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Electrical Characteristics (continued)
Parameter
Symbol min.
Values typ. max.
Unit
AC Characteristics Linear power gain 1) VDS = 9 V, ID = 1400 mA, f = 2.3 GHz, Pin = 0 dBm CLY38-00 CLY38-05 CLY38-10 Output power at 1dB gain compr.
1)
Glp
dB
10.0 10.5 10.5 P1dB
11.0 11.2 11.2
dBm
VDS = 9 V, ID(RF off) = 1400 mA, f = 2.3 GHz CLY38-00 CLY38-05 CLY38-10 Output power 1) VDS = 9 V, ID(RF off) = 1400 mA, f = 2.3 GHz, Pin = 28 dBm CLY38-00 CLY38-05 CLY38-10 Power added efficiency
1), 2)
37.5 38 38.5 Pout
37.8 38.3 38.8
dBm
PAE
37.8 38.3 38.8
%
VDS = 9 V, ID(RF off) = 1400 mA, f = 2.3 GHz, @ 1dB gain compression CLY38-00 CLY38-05 CLY38-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 40 45 45 47 50 53 -
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Typical Common Source S-Parameters
Z o = 50 |S22| V DS = 3 V, I D = 1400 mA, f |S11| Semiconductor Group
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Typical Common Source S-Parameters (continued)
Z o = 50 |S22| f |S11| [GHz] [mag] 0,5 0,921 0,6 0,918 0,7 0,916 0,8 0,915 0,9 0,915 1,0 0,918 1,1 0,920 1,2 0,921 1,3 0,923 1,4 0,924 1,5 0,926 1,6 0,927 1,7 0,928 1,8 0,929 1,9 0,929 2,0 0,930 2,1 0,931 2,2 0,931 2,3 0,932 2,4 0,932 2,5 0,933 2,6 0,933 2,7 0,934 2,8 0,934 2,9 0,933 3,0 0,934 3,1 0,934 3,2 0,934 3,3 0,934 3,4 0,934 3,5 0,933 3,6 0,933 3,7 0,933 3,8 0,933 3,9 0,932 4,0 0,932 4,1 0,932 4,2 0,932 4,3 0,931 4,4 0,930 4,5 0,930 4,6 0,930 4,7 0,929 4,8 0,929 4,9 0,929 5,0 0,928
V DS = 5 V, I D = 1400 mA, |S21| Semiconductor Group
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Typical Common Source S-Parameters (continued)
Z o = 50 |S22| f |S11| [GHz] [mag] 0,5 0,914 0,6 0,912 0,7 0,910 0,8 0,909 0,9 0,909 1,0 0,913 1,1 0,915 1,2 0,916 1,3 0,918 1,4 0,919 1,5 0,921 1,6 0,923 1,7 0,924 1,8 0,925 1,9 0,926 2,0 0,928 2,1 0,929 2,2 0,930 2,3 0,931 2,4 0,932 2,5 0,933 2,6 0,933 2,7 0,933 2,8 0,934 2,9 0,934 3,0 0,935 3,1 0,935 3,2 0,935 3,3 0,935 3,4 0,935 3,5 0,935 3,6 0,935 3,7 0,934 3,8 0,934 3,9 0,934 4,0 0,933 4,1 0,932 4,2 0,932 4,3 0,931 4,4 0,930 4,5 0,930 4,6 0,929 4,7 0,928 4,8 0,927 4,9 0,927 5,0 0,926
V DS = 9 V, I D = 1400 mA, |S21| Semiconductor Group
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Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only.
Ordering Form: Ordering Code: Q.......... CLY38- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: Q62702L110 CLY38-10 ES For CLY38; Output Power Level 10 (P1dB>38.5 dBm) in ESA Space Quality Level
Further Informations:
See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich
Semiconductor Group
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MWP-35 Package
Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000).
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